ild1615/ ilq1615 document number 82582 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179052 1 2 3 4 8 7 6 5 e c c e a c c a a c c a a c c a e c c e e c c e 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 dual channel quad channel pb p b -free e3 optocoupler, phototransistor output (dual, quad channel), 110 c rated features ? operating temperature from - 55 c to + 110 c identical channel to channel footprint dual and quad packages feature: - reduced board space - lower pin and parts count - better channel to channel ctr match - improved common mode rejection isolation test voltage, 5300 v rms lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 description the ild/q1615 are multi-channel 110 c rated pho- totransistor optocouplers that use gaas irled emit- ters and high gain npn phototransistors. these devices are constructed using over/under leadframe optical coupling and double molded insulation tech- nology resulting a withstand test voltage of 7500 vac- peak and a working voltage of 1700 v rms . the binned min./max. and linear ctr characteristics make these devices well suited for dc or ac voltage detection. eliminating the phototransistor base con- nection provides added electrical noise immunity from the transients found in many industrial control envi- ronments. because of guaranteed maximum non-saturated and saturated switching charac teristics, the ild/q1615 can be used in medium speed data i/o and control systems. the binned min./max. ctr specification allow easy worst case inte rface calculations for both level detection and switchin g applications. interfacing with a cmos logic is enhanced by the guaranteed ctr at i f = 1.0 ma. order information for additional information on t he available options refer to option information. part remarks ILD1615-1 ctr 40 - 80 %, dip ilq1615-1 ctr 40 - 80 %, dip ild1615-2 ctr 63 - 125 %, dip ilq1615-2 ctr 63 - 125 %, dip ild1615-3 ctr 100 - 200 %, dip ilq1615-3 ctr 100 - 200 %, dip ild1615-4 ctr 160 - 320 %, dip ilq1615-4 ctr 160 - 320 %, dip
www.vishay.com 2 document number 82582 rev. 1.4, 26-oct-04 ild1615/ ilq1615 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v forward current i f 60 ma surge current i fsm 1.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.0 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 70 v emitter-collector breakdown voltage bv eco 7.0 v collector current i c 50 ma t < 1.0 ms i c 100 ma power dissipation p diss 150 mw derate linearly from 25 c 1.5 mw/c parameter test condition symbol value unit storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 110 c soldering temperature 2.0 mm distance from case bottom t sld 260 c package power dissipation, ild1615 400 mw derate linearly from 25 c 5.33 mw/c package power dissipation, ilq1615 500 mw derate linearly from 25 c 6.67 mw/c isolation test voltage t = 1.0 sec. v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ?
ild1615/ ilq1615 document number 82582 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.01.151.3 v breakdown voltage i r = 10 av br 6.0 30 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 6.8 pf collector-emitter leakage current, -1, -2 v ce = 10 v i ceo 2.0 50 na collector-emitter leakage, -3, -4 v ce = 10 v i ceo 5.0 100 na collector-emitter breakdown voltage i ce = 0.5 ma bv ceo 70 v emitter-collector breakdown voltage i e = 0.1 ma bv eco 7.0 v package transfer characteristics channel/channel ctr match i f = 10 ma, v ce = 5.0 v ctrx/ ctry 1 to 1 2 to 1 parameter test condition symbol min ty p. max unit capacitance (input-output) v io = 0 v, f = 1.0 mhz c io 0.8 pf insulation resistance v io = 500 v, t a = 25 c r s 10 12 10 14 ? channel to channel isolation 500 vac parameter test condition part symbol min ty p. max unit current transfer ratio (collector-emitter saturated) i f = 10 ma, v ce = 0.4 v ILD1615-1 ilq1615-1 ctr cesat 25 % ild1615-2 ilq1615-2 ctr cesat 40 % ild1615-3 ilq1615-3 ctr cesat 60 % ild1615-4 ilq1615-4 ctr cesat 100 %
www.vishay.com 4 document number 82582 rev. 1.4, 26-oct-04 ild1615/ ilq1615 vishay semiconductors switching characteristics non-saturated saturated current transfer ratio (collector-emitter) i f = 10 ma, v ce = 5.0 v ILD1615-1 ilq1615-1 ctr ce 40 60 80 % i f = 1.0 ma, v ce = 5.0 v ILD1615-1 ilq1615-1 ctr ce 13 30 % i f = 10 ma, v ce = 5.0 v ild1615-2 ilq1615-2 ctr ce 63 80 125 % i f = 1.0 ma, v ce = 5.0 v ild1615-2 ilq1615-2 ctr ce 22 45 % i f = 10 ma, v ce = 5.0 v ild1615-3 ilq1615-3 ctr ce 100 150 200 % i f = 1.0 ma, v ce = 5.0 v ild1615-3 ilq1615-3 ctr ce 34 70 % i f = 10 ma, v ce = 5.0 v ild1615-4 ilq1615-4 ctr ce 160 200 320 % i f = 1.0 ma, v ce = 5.0 v ild1615-4 ilq1615-4 ctr ce 56 90 % parameter te s t c o n d i t i o n symbol min ty p. max unit turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t f 2.0 s propagation h-l i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t phl 1.1 s propagation l-h i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t plh 2.5 s parameter te s t c o n d i t i o n part symbol min ty p. max unit turn-on time i f = 20 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ILD1615-1 ilq1615-1 t on 3.0 s i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-2 ilq1615-2 t on 4.3 s ild1615-3 ilq1615-3 t on 4.3 s i f = 5.0 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-4 ilq1615-4 t on 6.0 s rise time i f = 20 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ILD1615-1 ilq1615-1 t r 2.0 s i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-2 ilq1615-2 t r 2.8 s ild1615-3 ilq1615-3 t r 2.8 s i f = 5.0 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-4 ilq1615-4 t r 4.6 s parameter test condition part symbol min ty p. max unit
ild1615/ ilq1615 document number 82582 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 common mode tr ansient immunity turn-off time i f = 20 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ILD1615-1 ilq1615-1 t off 18 s i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-2 ilq1615-2 t off 25 s ild1615-3 ilq1615-3 t off 25 s i f = 5.0 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-4 ilq1615-4 t off 25 s fall time i f = 20 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ILD1615-1 ilq1615-1 t f 11 s i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-2 ilq1615-2 t f 14 s ild1615-3 ilq1615-3 t f 14 s i f = 5.0 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ild1615-4 ilq1615-4 t f 15 s propagation h-l i f = 5.0 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ILD1615-1 ilq1615-1 t phl 1.6 s ild1615-2 ilq1615-2 t phl 2.6 s ild1615-3 ilq1615-3 t phl 2.6 s ild1615-4 ilq1615-4 t phl 5.4 s propagation l-h i f = 5.0 ma, v cc = 5.0 v, r l = 1.0 k ? , v ht 1.5 v ILD1615-1 ilq1615-1 t plh 8.6 s ild1615-2 ilq1615-2 t plh 7.2 s ild1615-3 ilq1615-3 t plh 7.2 s ild1615-4 ilq1615-4 t plh 7.4 s parameter test condition symbol min ty p. max unit common mode rejection output high v cm = 50 v p-p , r l = 1.0 k ? , i f = 0 ma cm h 5000 v/ s common mode rejection output low v cm = 50 v p-p , r l = 1.0 k ? , i f = 10 ma cm l 5000 v/ s common mode coupling capacitance c cm 0.01 pf parameter test condition part symbol min ty p. max unit
www.vishay.com 6 document number 82582 rev. 1.4, 26-oct-04 ild1615/ ilq1615 vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) figure 1. permissible power dissipation vs. temperature non-saturation operation figure 2. forward voltage vs. forward current figure 3. collector current vs. collector emitter voltage 0 50 100 150 200 250 300 350 400 0 20406080100120 18731 p Cpower dissipation (mw) tot detector led t amb C ambient temperature ( c) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17596 v C forward voltage ( v ) f 110 q c 0 q c 50 q c 25 q c C55 q c 0 5 10 15 20 25 30 35 40 45 50 0123456789101112131415 v C collector emitter voltage (v) 18733 i C collector current (ma) c ce i = 30 ma i =1ma i=5ma i = 10 ma i=15ma i = 20 ma f f f f f f figure 4.collectortoemitte rarcurrent.ambient temperature figure 5.ormaliecurrent.collectoremitteraturation voltage figure 6.ormaliecurrent traneratio.ambient temperature 0.10 1 10 100 1000 10000 C75 C25 25 75 125 t C ambient temperature ( c ) 18734 ce0 i(na) amb 40 v 12 v 24 v 0 10 20 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v C collector to emitter voltage (v) 18735 i (ma) 25 ma 10 ma 5ma 1ma 2ma c ce 0.0 0.2 0.4 0.6 0.8 1.0 1.2 C55 C35 C15 5 25 45 65 85 105 125 t amb C ambient temperature ( q c ) 17597 ctr C normalized output current normalized to i f = 10 ma, t amb = 25 c, v ce = 0.4 v, saturated norm i f = 5 ma 10 ma 1 ma
ild1615/ ilq1615 document number 82582 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 figure 7. normalized ctr vs. temperature figure 8. normalized ct r vs. forward current figure 9. normalized ct r vs. forward current 0.00 0.20 0.40 0.60 0.80 1.00 1.20 C55 C35 C15 5 25 45 65 85 105 125 t C ambient temperature (c) 18737 ctr C normalized output current 10 ma 5ma 1ma normalized to temp=25c@ i = 10 ma and v =5v norm amb f ce 1.10 0.90 0.70 0.50 0.30 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17598 C4 C1 C3 C2 ctr C normalized output current norm normalized to i f = 10 ma, t amb = 25 c, v ce = 0.4 v, saturated 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17599 ctr C normalized output current norm normalized to i f = 10 ma, t amb = 25 c, v ce = 5 v, nonCsaturated C4 C1 C3 C2 fiure 10. forward resistane s. forward current fiure 11. forward resistane s. forward current 1 10 100 1000 0.1 1.0 10.0 100.0 r C load resistance (k ? ) 18340 switching time ( s) toff ton pulse width = 100 ms i = 10 ma duty cycle = 50 % l f 1 10 100 1000 0.1 1 10 100 r C load resistance (k ? ) 18341 switching time (ms) t t pulse width = 100 ms i = 10 ma duty cycle = 50 % l f rise fall
www.vishay.com 8 document number 82582 rev. 1.4, 26-oct-04 ild1615/ ilq1615 vishay semiconductors package dimensions in inches (mm) package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 910111213141516 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 iso method a
ild1615/ ilq1615 document number 82582 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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